View MMBTSC3838_4485958.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MMBTSC3838
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier application
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 20 11 3 50 200 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 10 V, IC = 5 mA Current Gain Group R S Symbol hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) fT Cob NF Min. 56 120 20 11 3 1.4 Typ. 3.2 3.5 Max. 160 240 0.5 0.5 0.5 1.5 Unit A A V V V V GHz pF dB
Collector Cutoff Current at VCB = 10 V Emitter Cutoff Current at VEB = 2 V Collector Base Breakdown Voltage at IC = 10 A Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 A Collector Emitter Saturation Voltage at IC = 10 mA, IB = 5 mA Transition Frequency at VCE = 10 V, IE = 10 mA, f = 500 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Noise Figure at VCE = 6 V, IC = 2 mA , f = 500 MHz, Rg = 50
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 26/05/2007
MMBTSC3838
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 26/05/2007

▲Up To Search▲

Price & Availability of MMBTSC3838

	To Download MMBTSC3838 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .